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Image of - Handbook for III-V High Electron Mobility Transistor Technologies | Hardcover
Handbook for III-V High Electron Mobility Transistor Technologies | Hardcover

Handbook for III-V High Electron Mobility Transistor Technologies | Hardcover

by Nirmal

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key FeaturesCombines III-As/P/N HEMTs with reliability and current status in single volumeIncludes AC/DC modelling and (sub)millimeter wave devices with reliability analysisCovers all theoretical and experimental aspects of HEMTsDiscusses AlGaN/GaN transistorsPresents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Highlights

  • binding-icon

    9781138625273

    ISBN:

  • binding-icon

    Nirmal

    Author:

  • binding-icon

    442

    Pages:

  • binding-icon

    975 gm

    Weight:

  • langauage-icon

    English

    Language:

  • date-icon

    2019

    Year:

  • edition-icon

    1st Edition

    Edition:

  • binding-icon

    Hardcover

    Binding:

₹17406

₹21758

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key FeaturesCombines III-As/P/N HEMTs with reliability and current status in single volumeIncludes AC/DC modelling and (sub)millimeter wave devices with reliability analysisCovers all theoretical and experimental aspects of HEMTsDiscusses AlGaN/GaN transistorsPresents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

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